BSP129 - Siemens Semiconductor Group

BSP129 SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS® Small-Signal Transistor BSP 129 q q q q q q q VDS 240 V ID 0.2 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S 4 D BSP 129 SOT-223 BSP 129 Q67000-S073 E6327: 1000 pcs/reel BSP 129 Q67000-S314 E7941: 1000 pcs/r.

Features

b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 240 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.014 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.25 A Input capa.