BSP122 - NXP

BSP122 N-channel enhancement mode vertical D-MOS transistor

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol. DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID.

Features

• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol. DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage BSP122 MAX. 200 .