BSP128 - NXP

BSP128 N-channel enhancement mode vertical D-MOS transistor

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 1 2 3 MAM054 BSP128 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-s.

Features

• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 1 2 3 MAM054 BSP128 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX. 200 350 8 1.8 UNIT V mA Ω V handbook, halfpage 4 d g s PIN 1 2 3 4 gate drain .