BSP122 |
Part Number | BSP122 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transf... |
Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol. DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage BSP122 MAX. 200 ... |
Document |
BSP122 Data Sheet
PDF 58.57KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
2 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
3 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
4 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |