BSM75GD120DN2 - Siemens Semiconductor Group

BSM75GD120DN2 IGBT

BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 3 Ordering Code C67070-.

Features

75 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) VCE(sat) 2.5 3.1 1 4 3 3.7 V VGE = VCE, IC = 2 mA Collector-emitter saturation voltage VGE = 15 V, IC = 75 A, Tj = 25 °C VGE = 15 V, IC = 75 A, Tj = 125 °C Zero gate voltage collector current ICES 1.5 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 31 5.1 0.72 0.38 - S n.