BSM75GD60DLC - eupec

BSM75GD60DLC IGBT

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 70° C TC = 25 °C Periodischer Kollektor Spitzenstrom repe.

Features

r-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 75A, VGE = 15V, Tvj = 25°C IC = 75A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 1,5 mA, VCE = VGE, Tvj = 25°C Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 600V, VGE = 0V, Tvj = 25°C VCE = 600V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C .