BSM181F - Siemens Semiconductor Group

BSM181F IGBT

SIMOPAC® Module BSM 181 F VDS = 800 V ID = 34 A R DS(on) = 0.32 Ω q q q q q q q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 181 F Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1052-A2 Symbol Values 800 800 ± 20 34 136 – 55 … .

Features

ard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 64 03.96 BSM 181 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 21 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 21 A Input capacit.