BSM181 - Siemens Semiconductor Group

BSM181 IGBT

SIMOPAC® Module BSM 181 BSM 181 R VDS = 100 V ID = 200 A R DS(on) = 8.5 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 181 BSM 181 R Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1001-A2 C67076-A1016-A2 Symbol Values 800 .

Features

plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 23 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(o.