SiC Power Module BSM180D12P2C101 Datasheet Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connnect to NC pin. .
1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence.
Circuit diagram
1
10 9 8(N.C)
3,4
5 6 7(N.C)
2
*Do not connnect to NC pin.
Construction This product is a half bridge module consisting of SiC-DMOS from ROHM.
Dimensions & Pin layout (Unit : mm)
10 9 8
7 6 5
41 32
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
1/9
21.Aug.2019 - Rev.002
BSM180D12P2C101
Datasheet
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Conditions
Limit
Unit
Drain-source voltage Gate-source voltage() Gate-source voltage()
VDSS V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM180D12P3C007 |
ROHM |
SiC | |
2 | BSM180C12P2E202 |
ROHM |
SiC | |
3 | BSM181 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM181F |
Siemens Semiconductor Group |
IGBT | |
5 | BSM181R |
Siemens Semiconductor Group |
IGBT | |
6 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
7 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
8 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT | |
9 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
10 | BSM100GB60DLC |
eupec |
IGBT-Module | |
11 | BSM100GD120DLC |
eupec GmbH |
IGBT-Module | |
12 | BSM100GD120DN2 |
Siemens Semiconductor Group |
IGBT |