BSM15GD120D2 - Siemens Semiconductor Group

BSM15GD120D2 IGBT

BSM 15 GD 120 D2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 15 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SIXPACK 1 Ordering Code C67076-A2504-A17 1200V 25A VCE VCGR .

Features

eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C Zero gate voltage collector current ICES 0.5 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 150 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 5.5 1000 150 70 - S pF - VCE = 20 .