BSM121AR - Siemens Semiconductor Group

BSM121AR IGBT

SIMOPAC® Module BSM 121 AR VDS = 200 V ID = 130 A R DS(on) = 20 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 121 AR Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-S1014-A2 Symbol Values 200 200 ± 20 130 390 – 55 … + 150 7.

Features

plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 80 A Dynamic Characteristics Forward transconductance Values typ. max. Unit V(BR.