SiC Power Module BSM120D12P2C005 Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram Datasheet 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connnect to NC pin. C.
1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence.
Circuit diagram
Datasheet
1
10 9 8(N.C)
3,4
5 6 7(N.C)
2
*Do not connnect to NC pin.
Construction This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
10 9 8
7 6 5
41
32
(M2.6 FOR SELF-TAPPING SCREW)
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
1/8
2013.05 - Rev.B
BSM120D12P2C005
Data Sheet
Absolute maximum ratings (Tj = 25°C)
Parameter Drain-source voltage Gate-source voltage() Gate-source volta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM120C12P2C201 |
ROHM |
SiC | |
2 | BSM121AR |
Siemens Semiconductor Group |
IGBT | |
3 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT | |
6 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
7 | BSM100GB60DLC |
eupec |
IGBT-Module | |
8 | BSM100GD120DLC |
eupec GmbH |
IGBT-Module | |
9 | BSM100GD120DN2 |
Siemens Semiconductor Group |
IGBT | |
10 | BSM100GT120DN2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM101AR |
Siemens Semiconductor Group |
IGBT | |
12 | BSM10GD120DN2 |
eupec |
IGBT |