BSL307SP - Infineon Technologies AG

BSL307SP OptiMOS -P Small-Signal-Transistor

Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated • Qualified according to AEC Q101 • Halogen free according to IEC61249­2­21 Type BSL307SP Package Tape and reel Marking PG-TSOP-6-1 H6327: 3000pcs/r. sPC Product Summary VDS -30 V RDS(on.

Features

ge 1 2014-01-09 Thermal Characteristics Parameter Rev 2.0 Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSL307SP Symbol Values Unit min. typ. max. RthJS RthJA - - 50 K/W - - 230 - - 62.5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-40µA Zero gate voltage drain current VDS=-30V, VGS=0, Tj=25°C VDS=-30V, VGS=0, Tj=15.