BSL303SPE - Infineon Technologies

BSL303SPE MOSFET

Mosfet MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,-30V BSL303SPE DataSheet Rev.2.0 Final Industrial&Multimarket OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100% Lead-free; RoHS compliant, hal.

Features

• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Avalanche rated
• Qualified according to AEC Q101
• 100% Lead-free; RoHS compliant, halogen free BSL303SPE Product Summary VDS RDS(on),max ID VGS=-10 V VGS=-4.5 V -30 V 33 m 52 -6.3 A PG-TSOP-6 65 4 Type BSL303SPE Package Tape and Reel Information PG-TSOP-6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C 1 2 3 Marking sPV Hal. Free Yes Packing Non dry V.