BSL373SN - Infineon Technologies

BSL373SN MOSFET

Mosfet MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,100V BSL373SN DataSheet Rev.2.0 Final Industrial&Multimarket OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Avalanche rated • Qualified according to AEC Q101 • RoHS compliant • Halogen-free acording to IEC61249-2-21 Product Summary VDS.

Features

• N-channel
• Enhancement mode
• Avalanche rated
• Qualified according to AEC Q101
• RoHS compliant
• Halogen-free acording to IEC61249-2-21 Product Summary VDS RDS(on),max ID BSL373SN 100 V 0.23 Ω 2.0 A TSOP6 65 4 Type BSL373SN Package TSOP6 Tape and Reel Info H6327: 3000 pcs/ reel Marking sPY Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T A=25 °C T A=70 °C T A=25 °C I D=2 A, R GS=25 Ω I D=2 A, V DS=50 V, di /dt =200 A.