OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL306N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 30 V 57 mW 93 2.3 A PG-TSOP-6 6 54 1 23 Type Package Tap.
• Dual N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
BSL306N
Product Summary
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
30 V 57 mW 93 2.3 A
PG-TSOP-6 6 54
1 23
Type
Package Tape and Reel Information
BSL306N TSOP-6
H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Marking sPN
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
Avalanche energy, singl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSL302SN |
Infineon Technologies |
Small-Signal-Transistor | |
2 | BSL303SPE |
Infineon Technologies |
MOSFET | |
3 | BSL305SPE |
Infineon Technologies |
MOSFET | |
4 | BSL307SP |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
5 | BSL308C |
Infineon Technologies |
Small-Signal-Transistor | |
6 | BSL308PE |
Infineon Technologies |
Small-Signal-Transistor | |
7 | BSL314PE |
Infineon Technologies |
Small-Signal-Transistor | |
8 | BSL315P |
Infineon Technologies |
Small-Signal-Transistor | |
9 | BSL316C |
Infineon Technologies |
Small-Signal-Transistor | |
10 | BSL372SN |
Infineon Technologies |
MOSFET | |
11 | BSL373SN |
Infineon Technologies |
MOSFET | |
12 | BSL202SN |
Infineon Technologies |
Small-Signal-Transistor |