BSL316C OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor Features Product Summary · Complementary P + N channel · Enhancement mode · Logic level (4.5V rated) · Avalanche rated · Qualified according to AEC Q101 VDS RDS(on),max ID VGS=±10 V VGS=±4.5 V PN -30 30 V 150 160 mW 270 280 -1.5 1.4 A · 100% lead-free; RoHS compliant · Halogen free according t.
Product Summary
· Complementary P + N channel
· Enhancement mode
· Logic level (4.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
VDS RDS(on),max
ID
VGS=±10 V VGS=±4.5 V
PN -30 30 V 150 160 mW 270 280 -1.5 1.4 A
· 100% lead-free; RoHS compliant
· Halogen free according to IEC61249-2-21
PG-TSOP6
6 5 4
1 2 3
Type
Package
BSL316C PG-TSOP-6
Tape and Reel Information H6327: 3000 pcs / reel
Marking sPJ
Lead Free Packing Yes Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Symbol Conditions
Continuous drain current
I D T A=25 °C
Pulsed d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSL314PE |
Infineon Technologies |
Small-Signal-Transistor | |
2 | BSL315P |
Infineon Technologies |
Small-Signal-Transistor | |
3 | BSL302SN |
Infineon Technologies |
Small-Signal-Transistor | |
4 | BSL303SPE |
Infineon Technologies |
MOSFET | |
5 | BSL305SPE |
Infineon Technologies |
MOSFET | |
6 | BSL306N |
Infineon Technologies |
Small-Signal-Transistor | |
7 | BSL307SP |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
8 | BSL308C |
Infineon Technologies |
Small-Signal-Transistor | |
9 | BSL308PE |
Infineon Technologies |
Small-Signal-Transistor | |
10 | BSL372SN |
Infineon Technologies |
MOSFET | |
11 | BSL373SN |
Infineon Technologies |
MOSFET | |
12 | BSL202SN |
Infineon Technologies |
Small-Signal-Transistor |