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BSL307SP |
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| Part Number | BSL307SP |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated • Qualified according to AEC Q1... |
| Features |
ge 1
2014-01-09
Thermal Characteristics Parameter
Rev 2.0
Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
BSL307SP
Symbol
Values
Unit
min. typ. max.
RthJS RthJA
- - 50 K/W
- - 230 - - 62.5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID =-40µA
Zero gate voltage drain current
VDS=-30V, VGS=0, Tj=25°C VDS=-30V, VGS=0, Tj=15... |
| Document |
 BSL307SP Data Sheet
PDF 472.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSL302SN |
Infineon Technologies |
Small-Signal-Transistor |
|
| 2 | BSL303SPE |
Infineon Technologies |
MOSFET |
|
| 3 | BSL305SPE |
Infineon Technologies |
MOSFET |
|
| 4 | BSL306N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 5 | BSL308C |
Infineon Technologies |
Small-Signal-Transistor |
|