BSC0925ND - Infineon

BSC0925ND Power-MOSFET

OptiMOSTM Power-MOSFET Features • Dual N-channel OptiMOS™ MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance • Optimized for high performance Buck converter • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC0925ND Product Sum.

Features

• Dual N-channel OptiMOS™ MOSFET
• Optimized for clean switching
• 100% avalanche tested
• Superior thermal resistance
• Optimized for high performance Buck converter
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 BSC0925ND Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 30 5 40 8.6 13 V mW A nC nC VPhase Type BSC0925ND Package PG-TISON-8 Marking 0925ND Maximum ratings, at T j=25 °C, unless otherwise specified2) Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=1.