. . . . . 1 Maximum ratings 3 Thermal characteristics .
•OptimizedforhighperformanceBuckconverter
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
2.6
mΩ
ID 100 A
QOSS
16
nC
QG(0V..10V)
26
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC0902NS
Package PG-TDSON-8
Marking 0902NS
RelatedLinks -
1) J-STD2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC0902NSI |
Infineon |
MOSFET | |
2 | BSC0901NS |
Infineon Technologies |
N-Channel Power MOSFET | |
3 | BSC0901NSI |
Infineon Technologies |
n-Channel Power MOSFET | |
4 | BSC0904NSI |
Infineon Technologies |
N-Channel Power MOSFET | |
5 | BSC0906NS |
Infineon |
Power MOSFET | |
6 | BSC0908NS |
Infineon Technologies |
N-Channel Power MOSFET | |
7 | BSC0909NS |
Infineon Technologies |
N-Channel Power MOSFET | |
8 | BSC090N03LSG |
Infineon Technologies |
Power-MOSFET | |
9 | BSC090N03MSG |
Infineon Technologies |
Power-MOSFET | |
10 | BSC0910NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
11 | BSC0911ND |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
12 | BSC0921NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET |