BSC0923NDI - Infineon

BSC0923NDI Dual N-Channel OptiMOS MOSFET

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter VDS • Logic level (4.5V rated) RDS(on),max VGS=10 V • 100% avalanche tested ID • Qualified according to JEDEC1) for target applications VGS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to.

Features

Product Summary
• Dual N-channel OptiMOS™ MOSFET
• Optimized for high performance Buck converter VDS
• Logic level (4.5V rated) RDS(on),max VGS=10 V
• 100% avalanche tested ID
• Qualified according to JEDEC1) for target applications VGS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 VPhase BSC0923NDI Q1 Q2 30 30 V 5 2.8 mW 7 3.7 40 40 A Type BSC0923NDI Package PG-TISON-8 Marking 0923NDI Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Continuous drain current Pulsed drain current5) Avalanche energy, single pulse Gat.