BSC0924NDI - Infineon

BSC0924NDI Dual N-Channel OptiMOS MOSFET

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Integrated monolithic Schottky-like diode • Optimized for high performance Buck converter • Logic level (4.5V rated) • 100% avalanche tested VDS RDS(on),max ID VGS=10 V VGS=4.5 V • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS.

Features

Product Summary
• Dual N-channel OptiMOS™ MOSFET
• Integrated monolithic Schottky-like diode
• Optimized for high performance Buck converter
• Logic level (4.5V rated)
• 100% avalanche tested VDS RDS(on),max ID VGS=10 V VGS=4.5 V
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant VPhase
• Halogen-free according to IEC61249-2-22 BSC0924NDI Q1 Q2 30 30 V 5 3.7 mW 7 5.2 40 40 A Type BSC0924NDI Package PG-TISON-8 Marking 0924NDI Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Continuous drain current Pulsed drain curr.