OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Sup.
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• Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21
Applications
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• On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters
Table 1 Parameter
Key Performance Parameters Value 34 9.2 44 10 7.3 Unit V m# A nC nC Re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC0901NS |
Infineon Technologies |
N-Channel Power MOSFET | |
2 | BSC0901NSI |
Infineon Technologies |
n-Channel Power MOSFET | |
3 | BSC0902NS |
Infineon Technologies |
N-Channel Power MOSFET | |
4 | BSC0902NSI |
Infineon |
MOSFET | |
5 | BSC0904NSI |
Infineon Technologies |
N-Channel Power MOSFET | |
6 | BSC0906NS |
Infineon |
Power MOSFET | |
7 | BSC0908NS |
Infineon Technologies |
N-Channel Power MOSFET | |
8 | BSC090N03LSG |
Infineon Technologies |
Power-MOSFET | |
9 | BSC090N03MSG |
Infineon Technologies |
Power-MOSFET | |
10 | BSC0910NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
11 | BSC0911ND |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
12 | BSC0921NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET |