OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Sup.
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• Optimized SyncFET for high performance buck converters 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V N-channel Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Integrated monolithic Schottky-like diode
Applications
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• On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters
Table 1 Parameter
Key Performance Parameters Value 30 3.7 78 12 17 Unit V mΩ A nC Relate.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC0901NS |
Infineon Technologies |
N-Channel Power MOSFET | |
2 | BSC0901NSI |
Infineon Technologies |
n-Channel Power MOSFET | |
3 | BSC0902NS |
Infineon Technologies |
N-Channel Power MOSFET | |
4 | BSC0902NSI |
Infineon |
MOSFET | |
5 | BSC0906NS |
Infineon |
Power MOSFET | |
6 | BSC0908NS |
Infineon Technologies |
N-Channel Power MOSFET | |
7 | BSC0909NS |
Infineon Technologies |
N-Channel Power MOSFET | |
8 | BSC090N03LSG |
Infineon Technologies |
Power-MOSFET | |
9 | BSC090N03MSG |
Infineon Technologies |
Power-MOSFET | |
10 | BSC0910NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
11 | BSC0911ND |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
12 | BSC0921NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET |