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These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularl.
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• These are Pb−Free Devices
DATA SHEET www.onsemi.com
BS170
DGS TO−92 3 4.825x4.76 CASE 135AN
D GS
TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 D G S SOT−23 CASE 318−08
Drain
Gate
Source
MARKING DIAGRAM
BS170 ALYW
6ZM
1
BS170, 6Z = Device Code
A
= Assembly Plant Code
L
= Wafer Lot Number
YW
= Assembly Start Week
M
= Date Code
© Semiconductor Components Industries, LLC, 2010
August, 2024 − Rev. 8
ORDERING INFORMATION
See detailed ord.
BS170 - Fairchild Semiconductor
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,.
BS170 - NXP
N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed.
BS170 - Diodes Incorporated
BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compat.
BS170 - Motorola Inc
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N–Channel — Enhancement 1 DRA.
BS170 - Siemens Semiconductor Group
BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S T.
BS170 - General Semiconductor
BS170 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High in.
BS170 - Vishay Siliconix
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002.
BS170 - NTE
BS170 MOSFET N−Ch, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: Drain−Source Voltage,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BS170F |
Diodes |
N-Channel MOSFET |
|
| 2 | BS170F |
Zetex Semiconductors |
N-channel MOSFET |
|
| 3 | BS170G |
ON Semiconductor |
Small Signal MOSFET |
|
| 4 | BS170KL |
Vishay |
N-Channel MOSFET |
|
| 5 | BS170L |
Calogic LLC |
N-channel MOSFET |
|
| 6 | BS170P |
marutsu |
N-channel MOSFET |
|
| 7 | BS1001-7R |
Power-One |
100 Watt DC-DC Converters |
|
| 8 | BS100C |
Sharp Electrionic Components |
PHOTODIODE FOR VISIBLE LIGHT |
|
| 9 | BS107 |
Motorola Inc |
TMOS Switching(N-Channel-Enhancement) |
|
| 10 | BS107 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 11 | BS107 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
|
| 12 | BS107 |
Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
|