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BS170 |
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| Part Number | BS170 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on). • Direct interface t... |
| Features |
• Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdown. PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Junction temperature Drain-source ON-resistance VGS = 10 V; ID = 200 mA RDS(on) max. VDS VGS ID Ptot Tj max. max. max. max. max. BS170 60 V 15 V 500 mA 830 mW 150 °C 5 Ω handbook, halfpage d 1 2 3 g MAM146 s Note: Various pin configurations available. Fig.1 Simplified outline and symbo... |
| Document |
 BS170 Data Sheet
PDF 49.72KB |
| Distributor | Stock | Price | Buy |
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