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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5Ω BS170F S D PARTMARKING DETAIL – MV G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range .
* 60Volt VDS
* RDS(ON) = 5Ω
BS170F
S D
PARTMARKING DETAIL
– MV
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
SYMBOL VDS ID IDM VGS Ptot Tj:Tstg
SOT23
VALUE 60 0.15 3 ± 20 330
-55 to +150
UNIT V mA A V
mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
BVDSS 60 90
V ID=100µA, VGS=0V
Gate-Source Threshold Voltage
VGS(.
BS170F - Diodes
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BS170 |
Motorola Inc |
N-channel MOSFET |
|
| 2 | BS170 |
NXP |
N-channel MOSFET |
|
| 3 | BS170 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 4 | BS170 |
Fairchild Semiconductor |
N-channel MOSFET |
|
| 5 | BS170 |
Diodes Incorporated |
N-channel MOSFET |
|
| 6 | BS170 |
General Semiconductor |
DMOS Transistors |
|
| 7 | BS170 |
Vishay Siliconix |
N-channel MOSFET |
|
| 8 | BS170 |
ON Semiconductor |
N-channel MOSFET |
|
| 9 | BS170 |
NTE |
MOSFET |
|
| 10 | BS170G |
ON Semiconductor |
Small Signal MOSFET |
|
| 11 | BS170KL |
Vishay |
N-Channel MOSFET |
|
| 12 | BS170L |
Calogic LLC |
N-channel MOSFET |
|