Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BS170 |
Click to view a larger image
| Part Number | BS170 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N–Channel — Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain – Source Voltage Gate–... |
| Features |
dc, ID = 250 mAdc) VGS(Th) rDS(on) ID(off) gfs 0.8 — — — 2.0 1.8 — 200 3.0 5.0 0.5 — Vdc Ω µA mmhos
SMALL – SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) Ciss — — 60 pF SWITCHING CHARACTERISTICS Turn –On Time (ID = 0.2 Adc) See Figure 1 Turn –Off Time (ID = 0.2 Adc) See Figure 1 ton toff — — 4.0 4.0 10 10 ns ns 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. v v REV 1 Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BS170 RESIST... |
| Document |
 BS170 Data Sheet
PDF 77.58KB |
| Distributor | Stock | Price | Buy |
|---|
