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BS170 |
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| Part Number | BS170 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista... |
| Features |
■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current - Continuous - Pulsed 500 1200 60 60 ± 20 500 800 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds - 55 to 150 300 Ther... |
| Document |
 BS170 Data Sheet
PDF 1.25MB |
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