BLF2047 - NXP

BLF2047 UHF power LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 28 CAUTION PL (.

Features

• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (1.8 to 2.2 GHz).
• Internal input and output matching for high gain and efficiency APPLICATIONS
• Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF per.