1 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th .
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (1.8 to 2 GHz)
• Internal input and output matching for high gain and efficiency.
handbook, halfpage
BLF2047L
PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
APPLICATIONS
• Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package wi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2047 |
NXP |
UHF power LDMOS transistor | |
2 | BLF2047L-90 |
Philips |
UHF power LDMOS transistor | |
3 | BLF2043 |
NXP |
UHF power LDMOS transistor | |
4 | BLF2043F |
Philips |
UHF power LDMOS transistor | |
5 | BLF2045 |
NXP |
UHF power LDMOS transistor | |
6 | BLF2048 |
NXP |
UHF push-pull power LDMOS transistor | |
7 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS | |
8 | BLF202 |
NXP |
HF/VHF power MOS transistor | |
9 | BLF2022-120 |
NXP |
UHF push-pull power LDMOS transistor | |
10 | BLF2022-125 |
NXP |
UHF power LDMOS transistor | |
11 | BLF2022-30 |
NXP |
UHF power LDMOS transistor | |
12 | BLF2022-40 |
NXP |
UHF power LDMOS transistor |