300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 32 317 20.6 63.5 14 5 10.
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLA9G1011LS-300 |
Ampleon |
Power LDMOS transistor | |
2 | BLA9G1011L-300 |
Ampleon |
Power LDMOS transistor | |
3 | BLA9G1011L-300G |
Ampleon |
Power LDMOS transistor | |
4 | BLA0912-250 |
NXP |
Avionics LDMOS transistor | |
5 | BLA0912-250R |
NXP Semiconductors |
Avionics LDMOS power transistor | |
6 | BLA10 |
BEDFORD OPTO TECHNOLOGY |
3mm LED STAND-OFF | |
7 | BLA1011-10 |
NXP |
Avionics LDMOS transistor | |
8 | BLA1011-2 |
NXP |
Avionics LDMOS transistor | |
9 | BLA1011-200 |
NXP |
Avionics LDMOS transistor | |
10 | BLA1011-300 |
NXP |
Avionics LDMOS transistors | |
11 | BLA1011S-200 |
NXP |
Avionics LDMOS transistor | |
12 | BLA1117-1.5 |
GME |
800mA Low-Dropout Linear Regulator |