BLA9G1011L-300G - Ampleon

BLA9G1011L-300G Power LDMOS transistor

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 32 317 20.6 63.5 14 5 10.

Features

 Easy power control
 Integrated dual sided ESD protection enables excellent off-state isolation
 Enhanced ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (1030 MHz to 1090 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 Avi.