BLA0912-250R - NXP Semiconductors

BLA0912-250R Avionics LDMOS power transistor

Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; u.

Features

„ „ „ „ High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications „ Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN. NXP Semiconductors www.DataSheet4U.com BLA0912-250R Avionics LDMOS power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym039 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Pa.