300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs; δ = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.5 ηD (%) 57 CAU.
I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %: N Output power = 300 W N Power gain = 16.5 dB (typ) N Efficiency = 57 % (typ) I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for operation in 1030 MHz to 1090 MHz band I Internally matched for ease of use 1.3 Applications I RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency band www.DataSheet4U.com NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 2. Pinnin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLA1011-10 |
NXP |
Avionics LDMOS transistor | |
2 | BLA1011-2 |
NXP |
Avionics LDMOS transistor | |
3 | BLA1011-200 |
NXP |
Avionics LDMOS transistor | |
4 | BLA1011S-200 |
NXP |
Avionics LDMOS transistor | |
5 | BLA10 |
BEDFORD OPTO TECHNOLOGY |
3mm LED STAND-OFF | |
6 | BLA1117-1.5 |
GME |
800mA Low-Dropout Linear Regulator | |
7 | BLA1117-1.8 |
GME |
800mA Low-Dropout Linear Regulator | |
8 | BLA1117-2.5 |
GME |
800mA Low-Dropout Linear Regulator | |
9 | BLA1117-2.85 |
GME |
800mA Low-Dropout Linear Regulator | |
10 | BLA1117-3.3 |
GME |
800mA Low-Dropout Linear Regulator | |
11 | BLA1117-5.0 |
GME |
800mA Low-Dropout Linear Regulator | |
12 | BLA1117-ADJ |
GME |
800mA Low-Dropout Linear Regulator |