BLA1011S-200 - NXP

BLA1011S-200 Avionics LDMOS transistor

200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Conditions tp = 50 µs; δ = 2 % tp = 128 µs; δ = 2 % tp = 340 µs; .

Features

s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power ≥ 200 W x Gain ≥ 13 dB x Efficiency ≥ 45 % x Rise time ≤ 50 ns x Fall time ≤ 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mounting flange eliminates DC isolators, reducing common mode inductance 1.3 Applications s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range. www.DataSheet4U.com Philips Semiconductors BLA1011-200; BLA1011S-200 Avionics LDMOS transistor 2. Pinning information Table 2: .