BLA1011-2 - NXP

BLA1011-2 Avionics LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. 2 Top view BLA1011-2 PINNING - SOT538A PIN 1 2 3 drain gate source, connected to mounting base DESCRIPTION 1 3 MBK905 Fig.1 Simplified outline (SOT538A). QUICK REFEREN.

Features

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS
• Avionics applications in the 1030 to 1090 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. 2 Top view BLA1011-2 PINNING - SOT538A PIN 1 2 3 drain gate source, connected to mounting base DESCRIPTION 1 3 MBK905 Fig.1 Simplified outline (SOT538A). QUICK REFERENCE D.