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The BH616UV1611 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.0V/25OC and maximum access t.
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 5.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V -70 70ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention sup.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BH616UV1610 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 2 | BH616UV4010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit |
|
| 3 | BH616UV8010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 4 | BH616UV8011 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 5 | BH6111FV |
Rohm |
Power-unit |
|
| 6 | BH6113FV |
Rohm |
Power-unit |
|
| 7 | BH6114FV |
Rohm |
Power-unit |
|
| 8 | BH6150F |
Rohm |
System reset |
|
| 9 | BH6172GU |
Rohm |
System Regulator |
|
| 10 | BH6173GUL |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 11 | BH6176GU |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 12 | BH6038KN |
Rohm |
Power Management |
|