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BH6111FV 133 Communication ICs BH6111FV 134 Communication ICs FElectrical characteristics (unless otherwise noted, Ta = 25_C, VDD = 1.5V) BH6111FV 135 Communication ICs FMeasurement circuits BH6111FV 136 Communication ICs FApplication example BH6111FV 137 Communication ICs FElectrical characteristic curves BH6111FV 138 Communication ICs FE.
1) Internal VFM-type CMOS switching regulator and drivers for 6 channels. FAbsolute maximum ratings (Ta = 25_C) 2) Equipped with a reset voltage sensor and battery ejection sensor. FRecommended operating conditions 131 Communication ICs FBlock diagram BH6111FV 132 Communication ICs FPin descriptions BH6111FV 133 Communication ICs BH6111FV 134 Communication ICs FElectrical characteristics (unless otherwise noted, Ta = 25_C, VDD = 1.5V) BH6111FV 135 Communication ICs FMeasurement circuits BH6111FV 136 Communication ICs FApplication example BH6111FV 137 Communication ICs FEl.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BH6113FV |
Rohm |
Power-unit |
|
| 2 | BH6114FV |
Rohm |
Power-unit |
|
| 3 | BH6150F |
Rohm |
System reset |
|
| 4 | BH616UV1610 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 5 | BH616UV1611 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 6 | BH616UV4010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit |
|
| 7 | BH616UV8010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 8 | BH616UV8011 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 9 | BH6172GU |
Rohm |
System Regulator |
|
| 10 | BH6173GUL |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 11 | BH6176GU |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 12 | BH6038KN |
Rohm |
Power Management |
|