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BH6172GU incorporates 1 DCDC+ 5 Linear LDO regulators. It is integrated in a small 2.6mm×2.6mm size package, with 16 steps adjustable Vo’s for every channel, low voltage output (0.8V~) to support almost any kind of mobile application now available. ●Features 2 1) 1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I C) 2 2) 5-channel .
2 1) 1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I C) 2 2) 5-channel CMOS-type LDOs. (16 steps adjustable VO by I C, 150mA×3, 300mA×2) 3) Power ON/OFF control enabled by I2C interface or external pin 4) I2C compatible Interface. (Device address is “1001111”) 5) Wafer Level CSP package(2.6mm×2.6mm) for space-constrained applications 6) Discharge resistance selectable for power-down sequence ramp speed control 7) Over-current protection in all LDO regulators 8) Over-current protection in Step-down Converter 9) Over-voltage protection in Step-down Converter 10) Ther.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BH6173GUL |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 2 | BH6176GU |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 3 | BH6111FV |
Rohm |
Power-unit |
|
| 4 | BH6113FV |
Rohm |
Power-unit |
|
| 5 | BH6114FV |
Rohm |
Power-unit |
|
| 6 | BH6150F |
Rohm |
System reset |
|
| 7 | BH616UV1610 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 8 | BH616UV1611 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 9 | BH616UV4010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit |
|
| 10 | BH616UV8010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 11 | BH616UV8011 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 12 | BH6038KN |
Rohm |
Power Management |
|