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Ball No. B4 C4 E1 PIN Name DATA CLK VBAT1 VBAT2 PBAT LX PGND FB NRST OUT1 OUT2 OUT3 OUT4 OUT5 REFC EN_LD1 EN_LD2 EN_LD3 EN_LD4 VUSB DVDD GND TEST OUT6 BH6176 E4 A5 A4 A3 LOT B5 D4 D5 D1 E5 E3 A1 B1 C2 D2 D3 C3 A2 C5 C1 B3 V B G A 0 8 0 V 0 5 0 ( U N I T: m m ) E2 ● Block Diagram www.DataSheet.co.kr DVDD DATA LDO1 1.00-3.30V 16 step init 1.00V OUT.
re Range Tstg -55 ～ +125
*1 This is the allowable loss of when it is mounted on a ROHM specification board 60mm×60mm. To use at temperature higher than 25C , derate 1% per 1C. Recommended Operating Conditions (Ta=25C)
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Parameter VBAT, PBAT Voltage VUSB Voltage DVDD Voltage
Symbol VBAT VUSB VDVDD
*
*
*
2 2 3
Range 2.20 ～ 5.50 2.20 ～ 5.50 1.70 ～ 4.20
Unit V V V
*2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage, the LDO and SWREG output is not guaranteed to meet its published specifications.
*3 The DVDD Voltage must be under the Battery.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BH6172GU |
Rohm |
System Regulator |
|
| 2 | BH6173GUL |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 3 | BH6111FV |
Rohm |
Power-unit |
|
| 4 | BH6113FV |
Rohm |
Power-unit |
|
| 5 | BH6114FV |
Rohm |
Power-unit |
|
| 6 | BH6150F |
Rohm |
System reset |
|
| 7 | BH616UV1610 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 8 | BH616UV1611 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 9 | BH616UV4010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit |
|
| 10 | BH616UV8010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 11 | BH616UV8011 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM |
|
| 12 | BH6038KN |
Rohm |
Power Management |
|