BH616UV1611 |
Part Number | BH616UV1611 |
Manufacturer | Brilliance Semiconductor |
Description | The BH616UV1611 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS te... |
Features |
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 5.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V -70 70ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention sup... |
Document |
BH616UV1611 Data Sheet
PDF 177.87KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BH616UV1610 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM | |
2 | BH616UV4010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit | |
3 | BH616UV8010 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM | |
4 | BH616UV8011 |
Brilliance Semiconductor |
Ultra Low Power/High Speed CMOS SRAM | |
5 | BH6111FV |
Rohm |
Power-unit |