BFP650F - Infineon

BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor

Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz • Pb-free (RoHS compliant) and halog.

Features

age temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 4 3.7 13 13 1.2 150 10 500 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 130 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 80 mA, VCE = 3 V, pu.