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The BFP620 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its high linearity characteristics and collector design make the device suitable for a wide range of wireless applications. It remains cost competitive without compromising on ease of use. Feature list • Minimum noise f.
me / Ordering code Package Pin configuration Marking BFP620 / BFP620H7764XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E R2s Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Pieces / Reel 3000 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document www.infineon.com Revision 3.0 2024-07-01 BFP620 Surface mount high linearity silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP620F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
| 2 | BFP621 |
ETC |
NPN Transistor |
|
| 3 | BFP619 |
ETC |
NPN Transistor |
|
| 4 | BFP640 |
Infineon Technologies AG |
Surface mount high linearity silicon NPN RF bipolar transistor |
|
| 5 | BFP640ESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 6 | BFP640F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
| 7 | BFP640FESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 8 | BFP650 |
Infineon Technologies AG |
High Linearity Silicon Germanium Bipolar RF Transistor |
|
| 9 | BFP650F |
Infineon |
Linear Low Noise SiGe:C Bipolar RF Transistor |
|
| 10 | BFP67 |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |
|
| 11 | BFP67R |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |
|
| 12 | BFP67W |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |
|