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BFP650F |
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| Part Number | BFP650F |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon Germanium technology • High OIP3 and P-1dB • Ideal for... |
| Features |
age temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TStg
Value
4 3.7 13 13 1.2 150 10 500
150 -55 ... 150
Unit V
mA mW °C
Thermal Resistance Parameter Junction - soldering point2)
Symbol RthJS
Value 130
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 3 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 80 mA, VCE = 3 V, pu... |
| Document |
 BFP650F Data Sheet
PDF 544.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP650 |
Infineon Technologies AG |
High Linearity Silicon Germanium Bipolar RF Transistor |
|
| 2 | BFP619 |
ETC |
NPN Transistor |
|
| 3 | BFP620 |
Infineon |
Surface mount high linearity silicon NPN RF bipolar transistor |
|
| 4 | BFP620F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
| 5 | BFP621 |
ETC |
NPN Transistor |
|