Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free t.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP620 |
Infineon |
Surface mount high linearity silicon NPN RF bipolar transistor | |
2 | BFP621 |
ETC |
NPN Transistor | |
3 | BFP619 |
ETC |
NPN Transistor | |
4 | BFP640 |
Infineon Technologies AG |
Surface mount high linearity silicon NPN RF bipolar transistor | |
5 | BFP640ESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
6 | BFP640F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor | |
7 | BFP640FESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
8 | BFP650 |
Infineon Technologies AG |
High Linearity Silicon Germanium Bipolar RF Transistor | |
9 | BFP650F |
Infineon |
Linear Low Noise SiGe:C Bipolar RF Transistor | |
10 | BFP67 |
Vishay Siliconix |
Silicon NPN Planar RF Transistor | |
11 | BFP67R |
Vishay Siliconix |
Silicon NPN Planar RF Transistor | |
12 | BFP67W |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |