BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Small feedback capacitance D Low noi.
D Small feedback capacitance D Low noise figure D High transition frequency
2 1 1 2
94 9279
13 579
94 9278
95 10831
3
4
4
3
BFP67 Marking: 67 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP67R Marking: 67R Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
13 653
13 566
3
4
BFP67W Marking: W67 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85017 Rev. 3, 20-Jan-99
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BFP67/BFP67R/BFP67W
Vishay Telefunken Absolute Maximum Ratings
Tamb =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP67 |
Vishay Siliconix |
Silicon NPN Planar RF Transistor | |
2 | BFP67R |
Vishay Siliconix |
Silicon NPN Planar RF Transistor | |
3 | BFP619 |
ETC |
NPN Transistor | |
4 | BFP620 |
Infineon |
Surface mount high linearity silicon NPN RF bipolar transistor | |
5 | BFP620F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor | |
6 | BFP621 |
ETC |
NPN Transistor | |
7 | BFP640 |
Infineon Technologies AG |
Surface mount high linearity silicon NPN RF bipolar transistor | |
8 | BFP640ESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
9 | BFP640F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor | |
10 | BFP640FESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
11 | BFP650 |
Infineon Technologies AG |
High Linearity Silicon Germanium Bipolar RF Transistor | |
12 | BFP650F |
Infineon |
Linear Low Noise SiGe:C Bipolar RF Transistor |