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The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. 42 GHz and high linearity characteristics at low currents mItsatkreanthsiistidoenvfirceeqpuaerntcicyuflTaorlfy suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive withou.
ring code BFP640 / BFP640H6327XTSA1 Package SOT343 Pin configuration Marking 1 = B 2 = E 3 = C 4 = E R4s Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Pieces / Reel 3000 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP640ESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 2 | BFP640F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
| 3 | BFP640FESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 4 | BFP619 |
ETC |
NPN Transistor |
|
| 5 | BFP620 |
Infineon |
Surface mount high linearity silicon NPN RF bipolar transistor |
|
| 6 | BFP620F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
| 7 | BFP621 |
ETC |
NPN Transistor |
|
| 8 | BFP650 |
Infineon Technologies AG |
High Linearity Silicon Germanium Bipolar RF Transistor |
|
| 9 | BFP650F |
Infineon |
Linear Low Noise SiGe:C Bipolar RF Transistor |
|
| 10 | BFP67 |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |
|
| 11 | BFP67R |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |
|
| 12 | BFP67W |
Vishay Siliconix |
Silicon NPN Planar RF Transistor |
|