BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering C.
6 BFG 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFG 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Ch.
BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunicati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFG193 |
INCHANGE |
NPN Transistor | |
2 | BFG193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
3 | BFG193 |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
4 | BFG194 |
Siemens Semiconductor Group |
PNP Silicon RF Transistor | |
5 | BFG197 |
NXP |
NPN 7 GHz wideband transistor | |
6 | BFG198 |
NXP |
NPN 8GHz wideband transistor | |
7 | BFG198 |
UTC |
NPN TRANSISTOR | |
8 | BFG19S |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
9 | BFG19S |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
10 | BFG10 |
NXP |
NPN 2 GHz RF power transistor | |
11 | BFG10W |
NXP |
UHF power transistor | |
12 | BFG10X |
NXP |
UHF power transistor |