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BFG196 |
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| Part Number | BFG196 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power ampli... |
| Features |
to Application Note Thermal Resistance
1
Jun-27-2001
BFG196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BFG196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Paramet... |
| Document |
 BFG196 Data Sheet
PDF 60.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFG193 |
INCHANGE |
NPN Transistor |
|
| 2 | BFG193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 3 | BFG193 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 4 | BFG194 |
Siemens Semiconductor Group |
PNP Silicon RF Transistor |
|
| 5 | BFG196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|